Large Tunneling Magnetoresistance of a Ramp-type Junction with a SrTiO3Tunneling Barrier
نویسندگان
چکیده
منابع مشابه
Large magnetoresistance in a manganite spin tunnel junction using LaMnO3 as the insulating barrier
A spin tunnel junction based on manganites, with La1−xSrxMnO3 LSMO as ferromagnetic metallic electrodes and the undoped parent compound LaMnO3 LMO as insulating barrier, is here theoretically discussed using double-exchange model Hamiltonians and numerical techniques. For an even number of LMO layers, the ground state is shown to have antiparallel LSMO magnetic moments. This highly resistive, b...
متن کاملTheory of tunneling magnetoresistance of an epitaxial FeÕMgOÕFe„001... junction
Calculation of the tunneling magnetoresistance ~TMR! of an epitaxial Fe/MgO/Fe~001! junction is reported. The conductances of the junction in its ferromagnetic and antiferromagnetic configurations are determined without any approximations from the real-space Kubo formula using tight-binding bands fitted to an ab initio band structure of iron and MgO. The calculated optimistic TMR ratio is in ex...
متن کاملthe investigation of the relationship between type a and type b personalities and quality of translation
چکیده ندارد.
Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes
Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes" (2016). Evgeny Tsymbal Publications. 53. Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel junction due to a change in magnetization direction of one or both magnetic electrodes with respect to the flow of current. We present the results of first...
متن کاملHeusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance
In the present work we suggest a recipe for finding tetragonal Heusler compounds with perpendicular magnetic anisotropy (PMA) that also exhibit large tunneling magnetoresistance (TMR) when used as electrodes in magnetic tunnel junction devices with suitable tunneling barrier materials. We performed density-functional theory calculations for 286 Heusler compounds and identified 116 stable tetrag...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Magnetics
سال: 2003
ISSN: 1226-1750
DOI: 10.4283/jmag.2003.8.2.089